HUASHUO · FETs & Power MOSFETs · MPN HSS2N12A
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 2.8nC@10V |
| Output Capacitance(Coss) | 15pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 720mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
| Type | N-Channel |
120V 2A 1.7V 720mW 180mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS