HUASHUO · FETs & Power MOSFETs · MPN HSS2N10A
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| Gate Charge(Qg) | 7.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 720mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 288pF |
| Type | N-Channel |
100V 2A 1.4V 720mW 220mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS