HUASHUO HSS2301B

HUASHUO · FETs & Power MOSFETs · MPN HSS2301B

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Specifications

Gate Charge(Qg)10.1nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))300mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)73pF
RDS(on)89mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)677pF

Technical details

P-Channel 20V 3A 1W Surface Mount SOT-23

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