HUASHUO · FETs & Power MOSFETs · MPN HSS2012
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| Gate Charge(Qg) | 13nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 14mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 960pF |
N-Channel 20V 6.8A 1.25W Surface Mount SOT-23L