HUASHUO HSS1P25

HUASHUO · FETs & Power MOSFETs · MPN HSS1P25

No reviews yet — be the first to review HUASHUO HSS1P25.

Specifications

Gate Charge(Qg)8.9nC@4.5V
Drain to Source Voltage250V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation780mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)4Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)500pF
TypeP-Channel

Technical details

P-Channel 250V 0.7A 0.78W Surface Mount SOT-23L

Related FETs & Power MOSFETs