HUASHUO · FETs & Power MOSFETs · MPN HSS1N20
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 1A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 710mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 1.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 145pF |
N-Channel 200V 1A 710mW Surface Mount SOT-23L