HUASHUO · FETs & Power MOSFETs · MPN HSS10N03
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| Gate Charge(Qg) | 15nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 116pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.857nF |
| Type | N-Channel |
30V 10A 900mV 1.4W 11mΩ@10V 1 N-channel N-Channel SOT-23L Single FETs, MOSFETs RoHS