HUASHUO HSS06P03

HUASHUO · FETs & Power MOSFETs · MPN HSS06P03

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Specifications

Gate Charge(Qg)24.1nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.25W
RDS(on)36mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)102pF
Number1 P-Channel
Input Capacitance(Ciss)1.181nF
TypeP-Channel

Technical details

P-Channel 30V 6A 1.25W Surface Mount SOT-23

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