HUASHUO · FETs & Power MOSFETs · MPN HSS0103
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 195mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.3nF |
| Type | P-Channel |
100V 3A 1.6V 1W 195mΩ@10V 1 P-Channel P-Channel SOT-23L Single FETs, MOSFETs RoHS