HUASHUO HSS0103

HUASHUO · FETs & Power MOSFETs · MPN HSS0103

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)40pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)195mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
TypeP-Channel

Technical details

100V 3A 1.6V 1W 195mΩ@10V 1 P-Channel P-Channel SOT-23L Single FETs, MOSFETs RoHS

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