HUASHUO · FETs & Power MOSFETs · MPN HSP8119
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 210W |
| RDS(on) | 17mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.3nF |
| Type | P-Channel |
P-Channel 80V 90A 210W Through Hole TO-220