HUASHUO · FETs & Power MOSFETs · MPN HSP6117
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 85nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 241pF |
| RDS(on) | 14mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.635nF |
P-Channel 60V 80A 200W Through Hole TO-220