HUASHUO HSP6113

HUASHUO · FETs & Power MOSFETs · MPN HSP6113

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.8nC@4.5V
Output Capacitance(Coss)73pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)90mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.08nF
TypeP-Channel

Technical details

P-Channel 60V 17A 52.1W Through Hole TO-220FB-3L

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