HUASHUO HSP6040

HUASHUO · FETs & Power MOSFETs · MPN HSP6040

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation166W
Reverse Transfer Capacitance (Crss@Vds)245pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.706nF
TypeN-Channel

Technical details

N-Channel 60V 140A 166W Through Hole TO-220

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