HUASHUO HSP6032A

HUASHUO · FETs & Power MOSFETs · MPN HSP6032A

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)201pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)151pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.307nF
TypeN-Channel

Technical details

N-Channel 60V 75A 89W Through Hole TO-220

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