HUASHUO HSP5N25

HUASHUO · FETs & Power MOSFETs · MPN HSP5N25

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation38W
RDS(on)970mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

N-Channel 250V 5A 38W Through Hole TO-220

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