HUASHUO · FETs & Power MOSFETs · MPN HSP4119
No reviews yet — be the first to review HUASHUO HSP4119.
| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 780pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 3.9mΩ@10V;4.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 660pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 10.7nF |
| Type | P-Channel |
P-Channel 40V 150A 200W Through Hole TO-220