HUASHUO HSP40P15

HUASHUO · FETs & Power MOSFETs · MPN HSP40P15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)120nC@10V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)85mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.6nF

Technical details

P-Channel 150V 40A 100W Through Hole TO-220

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