HUASHUO · FETs & Power MOSFETs · MPN HSP3119
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 210nC@10V |
| Output Capacitance(Coss) | 1.38nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.7nF |
| Type | P-Channel |
P-Channel 30V 150A 200W Through Hole TO-220