HUASHUO HSP30N15A

HUASHUO · FETs & Power MOSFETs · MPN HSP30N15A

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation81W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.19nF

Technical details

N-Channel 150V 30A 81W Through Hole TO-220

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