HUASHUO · FETs & Power MOSFETs · MPN HSP3018B
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| Gate Charge(Qg) | 56.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 205A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 525pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.85nF |
N-Channel 30V 205A 187W Through Hole TO-220FB-3L