HUASHUO · FETs & Power MOSFETs · MPN HSP200N02
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 129pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.082nF |
N-Channel 200V 70A 200W Through Hole TO-220FB-3L