HUASHUO HSP120P03

HUASHUO · FETs & Power MOSFETs · MPN HSP120P03

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)530pF
RDS(on)3.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.3nF

Technical details

P-Channel 30V 120A 200W Through Hole TO-220

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