HUASHUO · FETs & Power MOSFETs · MPN HSP120P03
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.3nF |
P-Channel 30V 120A 200W Through Hole TO-220