HUASHUO HSP120N08

HUASHUO · FETs & Power MOSFETs · MPN HSP120N08

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)548pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.033nF
TypeN-Channel

Technical details

N-Channel 80V 120A 220W Through Hole TO-220

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