HUASHUO HSP110P04

HUASHUO · FETs & Power MOSFETs · MPN HSP110P04

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
RDS(on)-
Reverse Transfer Capacitance (Crss@Vds)722pF
Number1 P-Channel
Input Capacitance(Ciss)7.09nF
TypeP-Channel

Technical details

P-Channel 40V 110A 200W Through Hole TO-220

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