HUASHUO HSP044N25

HUASHUO · FETs & Power MOSFETs · MPN HSP044N25

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Specifications

Gate Charge(Qg)155nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)8.547nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation325W
Reverse Transfer Capacitance (Crss@Vds)429pF
RDS(on)44mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.547nF
TypeN-Channel

Technical details

N-Channel 250V 50A 325W Through Hole TO-220

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