HUASHUO · FETs & Power MOSFETs · MPN HSP0139
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| Gate Charge(Qg) | 92nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 55mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.516nF |
P-Channel 100V 35A 104W Through Hole TO-220