HUASHUO HSP0115

HUASHUO · FETs & Power MOSFETs · MPN HSP0115

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Specifications

Gate Charge(Qg)44.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)95mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.029nF

Technical details

P-Channel 100V 23A 96W Through Hole TO-220

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