HUASHUO HSP0076A

HUASHUO · FETs & Power MOSFETs · MPN HSP0076A

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)200nC@10V
Output Capacitance(Coss)1.92nF
Current - Continuous Drain(Id)308A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation429W
Reverse Transfer Capacitance (Crss@Vds)388pF
RDS(on)2.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.37nF
TypeN-Channel

Technical details

N-Channel 100V 308A 429W Through Hole TO-220

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