HUASHUO · FETs & Power MOSFETs · MPN HSP0076A
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 200nC@10V |
| Output Capacitance(Coss) | 1.92nF |
| Current - Continuous Drain(Id) | 308A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 429W |
| Reverse Transfer Capacitance (Crss@Vds) | 388pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.37nF |
| Type | N-Channel |
N-Channel 100V 308A 429W Through Hole TO-220