HUASHUO HSP0026

HUASHUO · FETs & Power MOSFETs · MPN HSP0026

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation62.5W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)125pF
Number1 N-channel
Input Capacitance(Ciss)1.93nF

Technical details

N-Channel 100V 50A 62.5W Through Hole TO-220

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