HUASHUO HSO8810

HUASHUO · FETs & Power MOSFETs · MPN HSO8810

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Specifications

Gate Charge(Qg)11.2nC@4.5V
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)15mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel Array 20V 7.3A 2W Surface Mount TSSOP-8

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