HUASHUO HSMA8076A

HUASHUO · FETs & Power MOSFETs · MPN HSMA8076A

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Specifications

Output Capacitance(Coss)1.051nF
Pd - Power Dissipation245W
Configuration-
Drain to Source Voltage80V
Gate Charge(Qg)101nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)1.75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.56nF

Technical details

245W 80V 2.9V 1.75mΩ@10V 1 N-channel N-Channel LFPAK-8(5x6) Single FETs, MOSFETs RoHS

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