HUASHUO · FETs & Power MOSFETs · MPN HSM9926
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| Gate Charge(Qg) | 6.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 28mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 553pF |
N-Channel Array 20V 6A 1.3W Surface Mount SOP-8