HUASHUO · FETs & Power MOSFETs · MPN HSM8P10
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| Gate Charge(Qg) | 19.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF |
P-Channel 100V 8A 3.1W Surface Mount SOP-8