HUASHUO · FETs & Power MOSFETs · MPN HSM6303
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| Gate Charge(Qg) | 9.86nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.447nF |
P-Channel 60V 4A 1.5W Surface Mount SOP-8