HUASHUO · FETs & Power MOSFETs · MPN HSM6115
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| Gate Charge(Qg) | 25nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 11A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.635nF |
P-Channel 60V 11A 5.2W Surface Mount SOP-8