HUASHUO HSM6056

HUASHUO · FETs & Power MOSFETs · MPN HSM6056

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.27nF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 60V 15A 3.1W Surface Mount SOP-8

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