HUASHUO HSM6006

HUASHUO · FETs & Power MOSFETs · MPN HSM6006

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)18.8nC@4.5V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)6.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.423nF
TypeN-Channel

Technical details

N-Channel 60V 6.3A 1.5W Surface Mount SOP-8

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