HUASHUO · FETs & Power MOSFETs · MPN HSM4P10D
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 150mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.07nF |
| Type | P-Channel |
P-Channel 100V 4A 2W Surface Mount SOP-8