HUASHUO HSM4614

HUASHUO · FETs & Power MOSFETs · MPN HSM4614

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.67W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)18mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.02nF

Technical details

N-Channel+P-Channel Array 40V 7A 6A 1.67W Surface Mount SOP-8

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