HUASHUO HSM4606BA

HUASHUO · FETs & Power MOSFETs · MPN HSM4606BA

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8nC@4.5V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)43pF;118pF
RDS(on)65mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)400pF;667pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 5A 2W Surface Mount SOP-8

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