HUASHUO HSM4606B

HUASHUO · FETs & Power MOSFETs · MPN HSM4606B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5.5nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2W
RDS(on)18mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)87pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)906pF

Technical details

N-Channel+P-Channel Array 30V 7A 2W Surface Mount SOP-8

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