HUASHUO HSM4606

HUASHUO · FETs & Power MOSFETs · MPN HSM4606

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Specifications

Gate Charge(Qg)7nC@4.5V;18.6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)58pF;97pF
RDS(on)26mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)388pF;926pF

Technical details

N-Channel+P-Channel Array 30V 7A 6A 1.5W Surface Mount SOP-8

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