HUASHUO HSM4435A

HUASHUO · FETs & Power MOSFETs · MPN HSM4435A

No reviews yet — be the first to review HUASHUO HSM4435A.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)32nC@10V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2W
RDS(on)15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)169pF
Number1 P-Channel
Input Capacitance(Ciss)1.445nF
TypeP-Channel

Technical details

30V 10A 1.4V 2W 15mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs