HUASHUO · FETs & Power MOSFETs · MPN HSM4435
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| Gate Charge(Qg) | 12.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.345nF |
P-Channel 30V 9.5A 3.1W Surface Mount SOP-8