HUASHUO HSM4006

HUASHUO · FETs & Power MOSFETs · MPN HSM4006

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Specifications

Gate Charge(Qg)18.8nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.332nF

Technical details

N-Channel 40V 12A 1.5W Surface Mount SOP-8

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