HUASHUO HSM2202

HUASHUO · FETs & Power MOSFETs · MPN HSM2202

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Specifications

Gate Charge(Qg)16nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)15mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel Array 20V 8A 1.25W Surface Mount SOP-8

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