HUASHUO · FETs & Power MOSFETs · MPN HSM20N02
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| Gate Charge(Qg) | 83nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 5.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
N-Channel 20V 20A 3.1W Surface Mount SOP-8