HUASHUO HSM0903

HUASHUO · FETs & Power MOSFETs · MPN HSM0903

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.229nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 3A 2.1W Surface Mount SOP-8

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