HUASHUO · FETs & Power MOSFETs · MPN HSM0228
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 68mΩ@10V |
| Number | 2 N-Channel |
| Type | N-Channel |
100V 4A 2.5V 1.5W 68mΩ@10V 2 N-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS