HUASHUO HSM01P15

HUASHUO · FETs & Power MOSFETs · MPN HSM01P15

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
RDS(on)780mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)14pF
Number1 P-Channel
Input Capacitance(Ciss)715pF
TypeP-Channel

Technical details

P-Channel 150V 1.3A 2W Surface Mount SOP-8

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